PXAC261202FCV1XWSA1
Infineon Technologies
Infineon Technologies
FET RF 2CH 65V 2.61GHZ
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The PXAC261202FCV1XWSA1 from Infineon Technologies is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the PXAC261202FCV1XWSA1 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Infineon Technologies's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.61GHz
- Gain: 13.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 230 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
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