R6009JNJGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 9A LPTS
$3.05
Available to order
Reference Price (USD)
1+
$3.05000
500+
$3.0195
1000+
$2.989
1500+
$2.9585
2000+
$2.928
2500+
$2.8975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6009JNJGTL from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's R6009JNJGTL for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 1.38mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STF17N62K3
STMicroelectronics
STL8NH3LL
Infineon Technologies
BSC014NE2LSIATMA1
Vishay Siliconix
SI2305CDS-T1-BE3
Panjit International Inc.
PJP3NA50_T0_00001
UnitedSiC
UJ4SC075011K4S
onsemi
FQD7N30TM
Panjit International Inc.
PJQ5420_R2_00001
Diodes Incorporated
ZXM64P03XTA
Renesas Electronics America Inc