R6015ENXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 15A TO-220FM, LOW-NOISE POW
$4.02
Available to order
Reference Price (USD)
1+
$4.02000
500+
$3.9798
1000+
$3.9396
1500+
$3.8994
2000+
$3.8592
2500+
$3.819
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the R6015ENXC7G single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's R6015ENXC7G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
DMN1008UFDFQ-7
Goford Semiconductor
G07P04S
Renesas Electronics America Inc
2SK2090(0)-T1-A
Renesas Electronics America Inc
RJK0355DPA-WS#J0
Infineon Technologies
IMZ120R140M1HXKSA1
Renesas
2SK3575-AZ
onsemi
NVTFWS020N06CTAG
Renesas Electronics America Inc
NP75N055YUK-E1-AY
Renesas
NP88N04NUG-S18-AY
Renesas Electronics America Inc