R6020ENXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 20A TO-220FM, LOW-NOISE POW
$5.59
Available to order
Reference Price (USD)
1+
$5.59000
500+
$5.5341
1000+
$5.4782
1500+
$5.4223
2000+
$5.3664
2500+
$5.3105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6020ENXC7G by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Goford Semiconductor
G08P06D3
Rohm Semiconductor
R6504ENXC7G
Infineon Technologies
BSF110N06NT3GXUMA1
Harris Corporation
RFP45N02L
onsemi
MTD12N06EZL
NXP USA Inc.
NX2020N2115
Infineon Technologies
IPDQ60R010S7AXTMA1
Renesas Electronics America Inc
2SK3111-Z-E1-AZ
Toshiba Semiconductor and Storage
TPCC8105,L1Q
IXYS