R6020KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 20A TO247
$8.30
Available to order
Reference Price (USD)
1+
$8.30000
500+
$8.217
1000+
$8.134
1500+
$8.051
2000+
$7.968
2500+
$7.885
Exquisite packaging
Discount
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Upgrade your designs with the R6020KNZ4C13 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the R6020KNZ4C13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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