R6047KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 47A TO247
$14.88
Available to order
Reference Price (USD)
1+
$14.88000
500+
$14.7312
1000+
$14.5824
1500+
$14.4336
2000+
$14.2848
2500+
$14.136
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6047KNZ4C13 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6047KNZ4C13 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
onsemi
FDS5672
Fairchild Semiconductor
SSP1N60B
Diodes Incorporated
DMP4065S-13
onsemi
FDP24N40
Alpha & Omega Semiconductor Inc.
AONR66406
Infineon Technologies
IPB65R110CFDATMA2
Panjit International Inc.
PJA3407_R1_00001
Infineon Technologies
IPP019N08NF2SAKMA1
Nexperia USA Inc.
PSMN1R8-30BL,118
Taiwan Semiconductor Corporation