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R6530KNZC17

Rohm Semiconductor
R6530KNZC17 Preview
Rohm Semiconductor
MOSFET N-CH 650V 30A TO3
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack

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