RCD075N19TL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 190V 7.5A CPT3
$1.17
Available to order
Reference Price (USD)
2,500+
$0.39200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RCD075N19TL by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 190 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 336mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta), 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
RJ1U330AAFRGTL
IXYS
IXTP01N100D
Diodes Incorporated
DMP4051LK3-13
NTE Electronics, Inc
NTE464
Harris Corporation
IRFF221
Vishay Siliconix
SIR804DP-T1-GE3
Rohm Semiconductor
ZDX050N50
Vishay Siliconix
SIHD6N65ET4-GE3
Fairchild Semiconductor
RFD16N05NL
Alpha & Omega Semiconductor Inc.