RD3G01BATTL1
Rohm Semiconductor
Rohm Semiconductor
PCH -40V -15A POWER MOSFET - RD3
$1.21
Available to order
Reference Price (USD)
1+
$1.21000
500+
$1.1979
1000+
$1.1858
1500+
$1.1737
2000+
$1.1616
2500+
$1.1495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RD3G01BATTL1 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RD3G01BATTL1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 25W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSC005N03LS5ATMA1
Renesas Electronics America Inc
NP82N04NLG-S18-AY
onsemi
NTD4809NA-1G
onsemi
NTHS4501NT1G
Infineon Technologies
IRF6662TRPBF
Diodes Incorporated
DMT10H072LFV-7
Infineon Technologies
IPP065N03LGXKSA1
STMicroelectronics
STI18N65M2
Vishay Siliconix
SI1013CX-T1-GE3
Rohm Semiconductor