RD3G600GNTL
Rohm Semiconductor

Rohm Semiconductor
MOSFET N-CH 40V 60A TO252
$2.01
Available to order
Reference Price (USD)
1+
$2.01000
500+
$1.9899
1000+
$1.9698
1500+
$1.9497
2000+
$1.9296
2500+
$1.9095
Exquisite packaging
Discount
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The RD3G600GNTL from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's RD3G600GNTL for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 40W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63