Shopping cart

Subtotal: $0.00

RD3G600GNTL

Rohm Semiconductor
RD3G600GNTL Preview
Rohm Semiconductor
MOSFET N-CH 40V 60A TO252
$2.01
Available to order
Reference Price (USD)
1+
$2.01000
500+
$1.9899
1000+
$1.9698
1500+
$1.9497
2000+
$1.9296
2500+
$1.9095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Alpha & Omega Semiconductor Inc.

AO4294

Panjit International Inc.

PJQ4465AP-AU_R2_000A1

Diodes Incorporated

DMP21D5UFB4-7B

Alpha & Omega Semiconductor Inc.

AOSN32338C

STMicroelectronics

STB140NF55T4

Texas Instruments

CSD23381F4

Taiwan Semiconductor Corporation

TSM3443CX6 RFG

Diodes Incorporated

DMN3016LSS-13

Top