RDN050N20FU6
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 200V 5A TO220FN
$0.00
Available to order
Reference Price (USD)
500+
$0.78470
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RDN050N20FU6 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's RDN050N20FU6 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FN
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FQD1P50TM
STMicroelectronics
STD22NF06AG
Vishay Siliconix
IRFIZ46G
Vishay Siliconix
SQD50N04-09H-GE3
NXP USA Inc.
BUK7Y25-80E/CX
Infineon Technologies
IRF2807ZS
Renesas Electronics America Inc
HAF1009-90STL
Infineon Technologies
IPD60R650CEATMA1
Littelfuse Inc.
LSIC1MO120G0160
Infineon Technologies