RE1C002ZPTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 20V 200MA EMT3F
$0.43
Available to order
Reference Price (USD)
3,000+
$0.06200
6,000+
$0.05580
15,000+
$0.04960
30,000+
$0.04650
75,000+
$0.04340
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RE1C002ZPTL single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RE1C002ZPTL combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3F (SOT-416FL)
- Package / Case: SC-89, SOT-490
Related Products
Renesas Electronics America Inc
UPA650TT-E1-A
STMicroelectronics
STF24N60M6
Nexperia USA Inc.
PHP79NQ08LT,127
Infineon Technologies
IRLML5103TRPBF
IXYS
IXFH14N80P
Nexperia USA Inc.
BUK7Y1R7-40HX
STMicroelectronics
STF20N60M2-EP
Microchip Technology
APT30M85BVRG
IXYS
IXFN32N100P
STMicroelectronics