RF1S40N10SM
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$1.32
Available to order
Reference Price (USD)
1+
$1.32000
500+
$1.3068
1000+
$1.2936
1500+
$1.2804
2000+
$1.2672
2500+
$1.254
Exquisite packaging
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Discover the RF1S40N10SM from Harris Corporation, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RF1S40N10SM ensures reliable performance in demanding environments. Upgrade your circuit designs with Harris Corporation's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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