RF4L070BGTCR
Rohm Semiconductor
Rohm Semiconductor
NCH 60V 7A, HUML2020L8, POWER MO
$1.13
Available to order
Reference Price (USD)
1+
$1.13000
500+
$1.1187
1000+
$1.1074
1500+
$1.0961
2000+
$1.0848
2500+
$1.0735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RF4L070BGTCR by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RF4L070BGTCR is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020-8S
- Package / Case: 8-PowerUDFN
Related Products
IXYS
IXTP12N70X2M
Diodes Incorporated
DMT6007LFG-13
Renesas Electronics America Inc
2SK3814-Z-E1-AZ
Diodes Incorporated
DMT3006LFDFQ-7
onsemi
FDMS86263P-23507X
Infineon Technologies
IPT013N08NM5LFATMA1
Diodes Incorporated
DMTH10H015SPS-13
onsemi
FDMC7678-L701
Diodes Incorporated
DMN62D1LFDQ-13
Diodes Incorporated