RGT50TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 48A 174W TO-247N
$3.34
Available to order
Reference Price (USD)
1+
$3.15000
10+
$2.83200
30+
$2.67767
120+
$2.32050
270+
$2.20152
510+
$1.97539
1,020+
$1.66600
Exquisite packaging
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The RGT50TS65DGC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGT50TS65DGC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 174 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 27ns/88ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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