APT50GT120B2RG
Microchip Technology
Microchip Technology
IGBT 1200V 94A 625W TO247
$16.44
Available to order
Reference Price (USD)
1+
$17.44000
10+
$15.85100
25+
$14.66200
100+
$13.47320
250+
$12.28436
500+
$11.49184
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the APT50GT120B2RG Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the APT50GT120B2RG delivers consistent and reliable operation. Trust Microchip Technology's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 94 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Power - Max: 625 W
- Switching Energy: 2330µJ (off)
- Input Type: Standard
- Gate Charge: 340 nC
- Td (on/off) @ 25°C: 24ns/230ns
- Test Condition: 800V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: -
Related Products
IXYS
IXBT24N170
onsemi
FGB3040G2-F085C
Infineon Technologies
IRG4IBC30WPBF-INF
Alpha & Omega Semiconductor Inc.
AOTF15B60D
STMicroelectronics
STGWT40H65FB
IXYS
IXBH10N300HV
IXYS
IXGR6N170A
Infineon Technologies
IGB15N60TATMA1
Renesas Electronics America Inc
RJP60F5DPK-01#T0
STMicroelectronics