RGTH80TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 70A 234W TO-247N
$0.00
Available to order
Reference Price (USD)
1+
$3.66000
10+
$3.28400
30+
$3.10500
120+
$2.69100
270+
$2.55300
510+
$2.29080
1,020+
$1.93200
Exquisite packaging
Discount
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Experience top-tier performance with the RGTH80TS65DGC11 Single IGBT transistor from Rohm Semiconductor. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the RGTH80TS65DGC11 ensures energy efficiency and reliability. Trust Rohm Semiconductor's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 234 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 34ns/120ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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