RGW50TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.43
Available to order
Reference Price (USD)
1+
$6.43000
500+
$6.3657
1000+
$6.3014
1500+
$6.2371
2000+
$6.1728
2500+
$6.1085
Exquisite packaging
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Experience top-tier performance with the RGW50TK65DGVC11 Single IGBT transistor from Rohm Semiconductor. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the RGW50TK65DGVC11 ensures energy efficiency and reliability. Trust Rohm Semiconductor's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
- Power - Max: 67 W
- Switching Energy: 390µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 35ns/102ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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