RGWX5TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.49
Available to order
Reference Price (USD)
1+
$6.49000
500+
$6.4251
1000+
$6.3602
1500+
$6.2953
2000+
$6.2304
2500+
$6.1655
Exquisite packaging
Discount
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The RGWX5TS65DHRC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGWX5TS65DHRC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGWX5TS65DHRC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 132 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Power - Max: 348 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 213 nC
- Td (on/off) @ 25°C: 62ns/237ns
- Test Condition: 400V, 37.5A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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