RHU002N06FRAT106
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 200MA UMT3
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
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Enhance your electronic projects with the RHU002N06FRAT106 single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's RHU002N06FRAT106 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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