RJH60A83RDPD-A0#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 10A
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The RJH60A83RDPD-A0#J2 Single IGBT transistor by Renesas Electronics America Inc is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RJH60A83RDPD-A0#J2 provides consistent performance in varied conditions. Rely on Renesas Electronics America Inc's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
- Power - Max: 51 W
- Switching Energy: 230µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 19.7 nC
- Td (on/off) @ 25°C: 31ns/54ns
- Test Condition: 300V, 10A, 5Ohm, 15V
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
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