IXGH42N30C3
IXYS
IXYS
IGBT 300V 223W TO247
$0.00
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Reference Price (USD)
30+
$2.23133
Exquisite packaging
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Optimize your power systems with the IXGH42N30C3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGH42N30C3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 250 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
- Power - Max: 223 W
- Switching Energy: 120µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 76 nC
- Td (on/off) @ 25°C: 21ns/113ns
- Test Condition: 200V, 21A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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