RJH60F7ADPK-00#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 328.9W TO-3P
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Enhance your electronic projects with the RJH60F7ADPK-00#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJH60F7ADPK-00#T0 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJH60F7ADPK-00#T0 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
- Power - Max: 328.9 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 63ns/142ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3P
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