STGB20NB37LZT4
STMicroelectronics
STMicroelectronics
IGBT 425V 40A 200W D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the STGB20NB37LZT4 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGB20NB37LZT4 provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGB20NB37LZT4 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 425 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
- Power - Max: 200 W
- Switching Energy: 11.8mJ (off)
- Input Type: Standard
- Gate Charge: 51 nC
- Td (on/off) @ 25°C: 2.3µs/2µs
- Test Condition: 250V, 20A, 1kOhm, 4.5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
Related Products
Infineon Technologies
IRGP6690DPBF
IXYS
IXGH25N100AU1
Infineon Technologies
SKW30N60HSFKSA1
STMicroelectronics
STGB7NB60KDT4
Infineon Technologies
IRG4PH20KD
IXYS
IXGX60N60B2D1
Infineon Technologies
IHW30N90TFKSA1
onsemi
FGB30N6S2D
Microchip Technology
APT100GT60B2RG
IXYS