RJH60F7BDPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 328.9W TO-247A
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Enhance your electronic projects with the RJH60F7BDPQ-A0#T0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJH60F7BDPQ-A0#T0 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJH60F7BDPQ-A0#T0 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
- Power - Max: 328.9 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 63ns/142ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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