RJH65D27BDPQ-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 100A TO247A
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The RJH65D27BDPQ-A0#T2 Single IGBT transistor by Renesas Electronics America Inc is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RJH65D27BDPQ-A0#T2 ensures precise power control and long-term stability. With Renesas Electronics America Inc's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RJH65D27BDPQ-A0#T2 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
- Power - Max: 375 W
- Switching Energy: 1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 175 nC
- Td (on/off) @ 25°C: 20ns/165ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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