RJK1003DPP-E0#T2
Renesas
Renesas
RJK1003DPP - N-CHANNEL MOSFET 10
$2.22
Available to order
Reference Price (USD)
1+
$2.21519
500+
$2.1930381
1000+
$2.1708862
1500+
$2.1487343
2000+
$2.1265824
2500+
$2.1044305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RJK1003DPP-E0#T2 by Renesas, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RJK1003DPP-E0#T2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
