Shopping cart

Subtotal: $0.00

RJK4532DPD-00#J2

Renesas Electronics America Inc
RJK4532DPD-00#J2 Preview
Renesas Electronics America Inc
MOSFET N-CH 450V 4A MP3A
$0.00
Available to order
Reference Price (USD)
3,000+
$0.51212
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 40.3W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Fairchild Semiconductor

HUFA76609D3S

Infineon Technologies

SPW21N50C3FKSA1

Alpha & Omega Semiconductor Inc.

AOT10T60P

Vishay Siliconix

IRFP22N60K

Nexperia USA Inc.

BUK9504-40A,127

Infineon Technologies

IRFIZ24EPBF

NXP USA Inc.

PHB193NQ06T,118

Vishay Siliconix

IRFU014

Toshiba Semiconductor and Storage

TPC6008-H(TE85L,FM

Top