RJK6011DP3-A0#J2
Renesas
Renesas
RJK6011DP3-A0#J2 - SILICON NCH S
$0.99
Available to order
Reference Price (USD)
1+
$0.99498
500+
$0.9850302
1000+
$0.9750804
1500+
$0.9651306
2000+
$0.9551808
2500+
$0.945231
Exquisite packaging
Discount
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Optimize your power electronics with the RJK6011DP3-A0#J2 single MOSFET from Renesas. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RJK6011DP3-A0#J2 combines cutting-edge technology with Renesas's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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