RJK6013DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 11A 4LDPAK
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Discover the RJK6013DPE-00#J3 from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RJK6013DPE-00#J3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LDPAK
- Package / Case: SC-83
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