RJK60S5DPK-M0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 20A TO3PSG
$14.80
Available to order
Reference Price (USD)
1+
$14.80000
500+
$14.652
1000+
$14.504
1500+
$14.356
2000+
$14.208
2500+
$14.06
Exquisite packaging
Discount
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The RJK60S5DPK-M0#T0 by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PSG
- Package / Case: TO-3P-3, SC-65-3
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