RJM0603JSC-00#13
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET 3N/3P-CH 60V 20A HSOP
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The RJM0603JSC-00#13 from Renesas Electronics America Inc is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the RJM0603JSC-00#13 provides reliable performance in demanding environments. Choose Renesas Electronics America Inc for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Obsolete
- FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
- Power - Max: 54W
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: 20-HSOP
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Renesas Electronics America Inc