RJP4009ANS-01#Q6
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 400V
$0.00
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The RJP4009ANS-01#Q6 Single IGBT transistor by Renesas Electronics America Inc is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RJP4009ANS-01#Q6 ensures precise power control and long-term stability. With Renesas Electronics America Inc's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RJP4009ANS-01#Q6 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A
- Power - Max: 1.8 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN
- Supplier Device Package: 8-VSON (3x4.4)
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