RN1314,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F USM TRANSISTOR PD 100MW F 2
$0.03
Available to order
Reference Price (USD)
1+
$0.03244
500+
$0.0321156
1000+
$0.0317912
1500+
$0.0314668
2000+
$0.0311424
2500+
$0.030818
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage's RN1314,LF redefines reliability in the Transistors - Bipolar (BJT) - Single, Pre-Biased category. With built-in bias resistors, this component accelerates prototyping while maintaining signal integrity. Key features include 1) 300mA collector current capacity 2) Wide operating temperature range (-55 C to +150 C) 3) RoHS compliance. Implement in motor control systems, sensor interfaces, or battery-powered devices for optimal results.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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