RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
$0.10
Available to order
Reference Price (USD)
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$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
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$0.096
2500+
$0.095
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Enhance your electronic projects with Toshiba Semiconductor and Storage's RN1965FE(TE85L,F), a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The RN1965FE(TE85L,F) is perfect for use in audio equipment, power supplies, and automotive control systems. With Toshiba Semiconductor and Storage's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the RN1965FE(TE85L,F) is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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