NSBC143EDXV6T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT563
$0.11
Available to order
Reference Price (USD)
1+
$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the NSBC143EDXV6T1G by onsemi, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the NSBC143EDXV6T1G excels in automotive systems, power management modules, and communication devices. onsemi's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose NSBC143EDXV6T1G for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Rohm Semiconductor
EMD12T2R
Nexperia USA Inc.
PEMH14,115
Nexperia USA Inc.
PUMD18,115
Rohm Semiconductor
EMD2T2R
Rohm Semiconductor
UMD6NFHATR
Infineon Technologies
BCR35PNH6327XTSA1
onsemi
NSVBC143ZDXV6T1G
Nexperia USA Inc.
PEMH1,115
Diodes Incorporated
DCX114YUQ-13-F
Toshiba Semiconductor and Storage