RN2105ACT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.08A CST3
$0.05
Available to order
Reference Price (USD)
10,000+
$0.05208
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, RN2105ACT(TPL3) offers unmatched convenience. Toshiba Semiconductor and Storage's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
Related Products
Diodes Incorporated
DDTA143TE-7-F
Infineon Technologies
BCR196E6327HTSA1
Nexperia USA Inc.
NHDTA114ETR
Rohm Semiconductor
DTA143ZUAT106
Nexperia USA Inc.
NHDTA114YTR
onsemi
DTC123JM3T5G
Toshiba Semiconductor and Storage
RN1407,LF
Toshiba Semiconductor and Storage
RN1304,LF
onsemi
MMUN2115LT1G
Rohm Semiconductor