RN2709,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
$0.05
Available to order
Reference Price (USD)
1+
$0.05364
500+
$0.0531036
1000+
$0.0525672
1500+
$0.0520308
2000+
$0.0514944
2500+
$0.050958
Exquisite packaging
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Discover the versatility of Toshiba Semiconductor and Storage's RN2709,LF, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The RN2709,LF is widely used in IoT devices, medical equipment, and renewable energy systems. Toshiba Semiconductor and Storage's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the RN2709,LF offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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