RN1709,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
$0.05
Available to order
Reference Price (USD)
1+
$0.05364
500+
$0.0531036
1000+
$0.0525672
1500+
$0.0520308
2000+
$0.0514944
2500+
$0.050958
Exquisite packaging
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The RN1709,LF from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the RN1709,LF ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Toshiba Semiconductor and Storage's RN1709,LF delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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