RN4901FE,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR4.7KOHM Q1BER
$0.25
Available to order
Reference Price (USD)
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$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
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The RN4901FE,LF(CT by Toshiba Semiconductor and Storage is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. Toshiba Semiconductor and Storage's RN4901FE,LF(CT is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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