RQA0002DNSTB-E
Renesas
Renesas
RQA0002DNS - N CHANNEL MOSFET
$3.66
Available to order
Reference Price (USD)
1+
$3.66074
500+
$3.6241326
1000+
$3.5875252
1500+
$3.5509178
2000+
$3.5143104
2500+
$3.477703
Exquisite packaging
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Discover the RQA0002DNSTB-E from Renesas, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RQA0002DNSTB-E ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 750mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 2-HWSON (5x4)
- Package / Case: 3-DFN Exposed Pad
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