RQA0008RXDQS#H1
Renesas
Renesas
RQA0008 - N-CHANNEL POWER MOSFET
$0.55
Available to order
Reference Price (USD)
1+
$0.54786
500+
$0.5423814
1000+
$0.5369028
1500+
$0.5314242
2000+
$0.5259456
2500+
$0.520467
Exquisite packaging
Discount
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The RQA0008RXDQS#H1 from Renesas sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Renesas's RQA0008RXDQS#H1 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 0 V
- FET Feature: -
- Power Dissipation (Max): 10W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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