RS6G120BGTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 40V 210A, HSOP8, POWER MOSFE
$3.60
Available to order
Reference Price (USD)
1+
$3.60000
500+
$3.564
1000+
$3.528
1500+
$3.492
2000+
$3.456
2500+
$3.42
Exquisite packaging
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Discover the RS6G120BGTB1 from Rohm Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RS6G120BGTB1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Rohm Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.34mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 104W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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