RSH110N03TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 11A 8SOP
$0.00
Available to order
Reference Price (USD)
2,500+
$0.50120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RSH110N03TB1 single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's RSH110N03TB1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
IXYS
IXTP64N055T
STMicroelectronics
STL9P2UH7
Infineon Technologies
IRFH5025TR2PBF
Infineon Technologies
IRLR014NTRPBF
Infineon Technologies
IRF7855PBF
onsemi
MCH3376-TL-W
onsemi
HUFA76639S3ST
Infineon Technologies
IRL3715SPBF
Vishay Siliconix
SI1414DH-T1-GE3
Infineon Technologies