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RW1A030APT2CR

Rohm Semiconductor
RW1A030APT2CR Preview
Rohm Semiconductor
MOSFET P-CH 12V 3A 6WEMT
$0.53
Available to order
Reference Price (USD)
8,000+
$0.11160
16,000+
$0.10440
24,000+
$0.10080
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
  • Vgs (Max): -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: 6-SMD, Flat Leads

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