S3B-E3/9AT
Vishay General Semiconductor - Diodes Division
         
                
                                Vishay General Semiconductor - Diodes Division                            
                        
                                DIODE GEN PURP 100V 3A DO214AB                            
                        $0.16
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.15972
                                        500+
                                            $0.1581228
                                        1000+
                                            $0.1565256
                                        1500+
                                            $0.1549284
                                        2000+
                                            $0.1533312
                                        2500+
                                            $0.151734
                                        Exquisite packaging
                            Discount
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                    The S3B-E3/9AT from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the S3B-E3/9AT meets rigorous standards, providing dependable performance for both commercial and industrial applications.                
            Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    