SCT2160KEGC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 22A, THD, SILICON-CARBIDE
$21.54
Available to order
Reference Price (USD)
1+
$21.54000
500+
$21.3246
1000+
$21.1092
1500+
$20.8938
2000+
$20.6784
2500+
$20.463
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SCT2160KEGC11 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SCT2160KEGC11 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
Renesas Electronics America Inc
RJK1002DPP-A0#T2
Diodes Incorporated
DMP4025SFG-7
onsemi
NVTYS025P04M8LTWG
Diodes Incorporated
DMPH4015SPSQ-13
Renesas Electronics America Inc
UPA2454TL-E1-A
Diodes Incorporated
DMNH6021SPSQ-13
onsemi
NVTFS6H854NLWFTAG
Diodes Incorporated
DMP2005UFG-7
Renesas
NP160N055TUJ-E1-AY
Infineon Technologies