SCT2280KEHRC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 14A, THD, SILICON-CARBIDE
$15.73
Available to order
Reference Price (USD)
1+
$15.73000
500+
$15.5727
1000+
$15.4154
1500+
$15.2581
2000+
$15.1008
2500+
$14.9435
Exquisite packaging
Discount
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The SCT2280KEHRC11 by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SCT2280KEHRC11 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 400 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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