SCT2450KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 10A TO247
$0.00
Available to order
Reference Price (USD)
1+
$7.93000
10+
$7.16000
30+
$6.82667
120+
$5.92742
270+
$5.66100
510+
$5.16151
1,020+
$4.66200
Exquisite packaging
Discount
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Upgrade your designs with the SCT2450KEC by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SCT2450KEC is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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