SCT2450KEGC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 10A, THD, SILICON-CARBIDE
$12.42
Available to order
Reference Price (USD)
1+
$12.42000
500+
$12.2958
1000+
$12.1716
1500+
$12.0474
2000+
$11.9232
2500+
$11.799
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SCT2450KEGC11 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's SCT2450KEGC11 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STW75N65DM6-4
onsemi
NTTFS6H880NTAG
Panjit International Inc.
PJQ1917_R1_00001
Infineon Technologies
IPTG014N10NM5ATMA1
onsemi
NVTFWS070N10MCLTAG
Nexperia USA Inc.
PMZ420UNYL
STMicroelectronics
STL22N65M5
onsemi
NVTFWS040N10MCLTAG
Renesas Electronics America Inc
RJK0211DPA-00#J5A
Diodes Incorporated